PROGRESS: Completed Project	PROJECT REF: NA
PROJECT TITLE: Ultraviolet (UV) Radiation Detector
PROJECT DESCRIPTION: Ultraviolet (UV) Radiation Detector Proprietary GaN-based Film Technology PolyU has developed proprietary technology to grow GaN using our state-of-the-art molecular beam epitaxy system. A Schottky structure, with a semi-transparent metallic layer is fabricated on top of the GaN film as the key active structure for the detection of UV radiation. When UV radiation incidents onto the structure, a photo current will be induced in the device which will be amplified by an external circuit. We are able to create stable and yet sensitive sensor and detector for UV radiation.
FOCUS AREA(S): Opto Electronics
KEYWORDS: Ultraviolet (UV) Radiation Detector
MODE OF COLLABORATION: any
STATUS PATENT: NA	PATENT NO: NA
ORGANIZATION: Department of EIE
CONTACT PERSON: Prof. Charles Surya	EMAIL: ensurya@polyu.edu.hk
TEL: (852)-27666220	FAX: (852)-23628439
WEBSITE: http://www.ife.polyu.edu.hk/template_areas.htm	DATE: 10/01/2005