PROGRESS: Completed Project	PROJECT REF: INMT8
PROJECT TITLE: 用於無線通訊的寬禁帶氮化鎵高遷移率高功率放大器 Wide Band-Gap AlGaN/GaN HEMT Power Amplifier for Wireless Communication
PROJECT DESCRIPTION: 香港科技大學電機與電子工程系及納米材料技術研發所陳敬教授和劉紀美教授領導的研究小組近來在寬禁帶氮化鎵高遷移率晶體管研究方面取得突破性進展。該組經過一年半的研究，通過對晶體管結構的設計優化、工藝優化和利用MOCVD系統精確的材料生長控制，發明了複合溝道氮化鎵高遷移率晶體管。這種器件有效地提高了氮化鎵高遷移率晶體管的線性度，是迄今爲止國際上報道的線性度最好的氮化鎵高遷移率晶體管。與商用的硅基LDMOS及砷化鎵器件相比，這種器件的輸出功率提高了十倍，可使系統的相應成本節約90％以上，並且可以工作在嚴酷的高溫（300℃）環境中，有望廣泛應用於下一代3G、4G移動通訊領域。目前，該組研究人員正在申請相關的技術專利，同時開展了氮化鎵大功率輸出級器件、單片模組和功率輸入輸出元件的研究，以期早日達到商用標準。該專案由香港創新科技署資助。我們竭誠歡迎各廠商垂詢合作。 Technology: A novel composite-channel AlGaN/GaN HEMT fabricated using high-volume MOCVD III-Nitride growth system. Superior linearity at RF/microwave frequencies. High power density and high temperature endurance make it the preferable candidate for next generation wireless communication, ie.3G/4G. Advantages: Ten times more output power density compared to commercially available Si-LDMOS and GaAs HBTs. In communication system, device-related cost can be saved by 90%. Easy to design RF power amplifier circuits. Applications: Power amplifiers for wireless basestations.
FOCUS AREA(S): Nanotechnology and Advanced Materials
KEYWORDS: 無線通訊, 寬禁帶氮化鎵高遷移率高功率放大器, Wide Band-Gap AlGaN/GaN HEMT Power Amplifier, Wireless Communication
MODE OF COLLABORATION: Technology Licensing, Further R&D Collaboration
STATUS PATENT: NA	PATENT NO: NA
ORGANIZATION: Hong Kong University of Science and Technology R and D Corporation Limited
CONTACT PERSON: Shirley Woo	EMAIL: cawoosw@ust.hk
TEL: (852)-23587918	FAX: (852)-23582751
WEBSITE: http://rdc.ust.hk/	DATE: 03/01/2005