PROGRESS: Completed Project	PROJECT REF: INMT7
PROJECT TITLE: 氮化镓集成高溫壓力傳感器 GaN-based Integrated High-Temperature Pressure Sensors
PROJECT DESCRIPTION: 香港科技大學電子工程系陳敬教授和劉紀美教授所領導的研究小組經過長期研究﹐開發出一種在硅基上生長無裂痕氮化鎵薄膜的新技術﹐並應用該技術製造可耐高溫的高靈敏度的集成壓力傳感器。這種氮化鎵壓力傳感器具備溫度及化學的穩定性﹐可在600°C高溫下正常工作﹐而硅基的使用令該傳感器的生產工藝變得簡單且造價低廉。該傳感器可廣泛應用於各類工業壓力傳感器﹐如汽車壓力傳感器等。我們竭誠歡迎各廠商垂詢合作。 Technology: Growth of crack-free GaN films on silicon substrates. Fabrication techniques for releasing hard-to-etch GaN membranes. Integration of GaN-based transistors for sensing circuits. Advantages: Highly sensitive. Thermally and chemically stable. Can operate at high temperature up to 600°C. Implementation on silicon substrates, simple fabrication process and low cost. Applications: Automotive pressure sensors and other Industrial pressure sensors.
FOCUS AREA(S): Nanotechnology and Advanced Materials
KEYWORDS: 氮化镓集成高溫壓力傳感器, GaN-based Integrated High-Temperature Pressure Sensor
MODE OF COLLABORATION: Technology Licensing, Further R&D Collaboration
STATUS PATENT: NA	PATENT NO: NA
ORGANIZATION: Hong Kong University of Science and Technology R and D Corporation Limited
CONTACT PERSON: Shirley Woo	EMAIL: cawoosw@ust.hk
TEL: (852)-23587918	FAX: (852)-23582751
WEBSITE: http://rdc.ust.hk/	DATE: 03/01/2005