PROGRESS: Completed Project	PROJECT REF: INMT6
PROJECT TITLE: 納米級雙柵場效應晶體管 Nano Fin Field Effect Transistor (FinFET)
PROJECT DESCRIPTION: 香港科技大學電機及電子工程系及納米材料技術研發所陳正豪教授領導的高性能納米器件研究小組近日在納米級雙柵場效應晶體管研究方面取得突破性進展。該組經過近一年的研究﹐成功研製了納米級雙柵場效應晶體管。為了實現此級別呎吋的器件，該組發明了一種用保護微縮掩模技術來製備納米級模板的方法。同時採用了感應耦閤等離子的深層反應離子刻蝕技術來實現晶體管管體的垂直結搆。具有50納米以下的管體呎吋和90納米以下的柵長的晶體管器件實現了61.4毫伏每十倍的亞閾值斜率和550微安每微米的驅動電流（1伏供電電壓），此結果已經過充分重複的實驗驗證。目前﹐該組研究人員已就相關技術申請了一項專利﹐另有兩項技術專利在準備申請中。同時，該組也進一步研究産品級納米器件和其相關的三維電路設計與製造﹐以期早日達到商用標準。該項目由香港創新科技署資助。我們竭誠歡迎各廠商垂詢合作。 Technology: Highly scaled double gate FinFET device has been successfully fabricated with sub-50nm feature size. Capped trimming hardmask technique has been used to define the fin and gate with such small dimension. Deep RIE etching was utilized to realize the vertical fin sidewall. Repeatable testing results have shown that such a nano-FinFET device has an ideal subthreshold swing of 61.4mV/dec and very high drive current of 550uA/um@Vg-Vt=1V and Vds=1V even with non-optimized Source/Drain design. Advantages: Ideal subthreshold swing (~60mV/dec), high transconductance > 40% improvements over planar single gate device Applications: Highly scaled and high performance device for next generation
FOCUS AREA(S): Nanotechnology and Advanced Materials
KEYWORDS: 納米級雙柵場效應晶體管 Nano Fin Field Effect Transistor (FinFET)
MODE OF COLLABORATION: Technology Licensing, Further R&D Collaboration
STATUS PATENT: NA	PATENT NO: NA
ORGANIZATION: Hong Kong University of Science and Technology R and D Corporation Limited
CONTACT PERSON: Shirley Woo	EMAIL: cawoosw@ust.hk
TEL: (852)-23587918	FAX: (852)-23582751
WEBSITE: http://rdc.ust.hk/	DATE: 03/01/2005