PROGRESS: Completed Project	PROJECT REF: INMT5
PROJECT TITLE: 碳納米管場效應晶體管 Carbon Nanotube Field Effect Transistor
PROJECT DESCRIPTION: 香港科技大學電機與電子工程系及納米材料技術研發所陳正豪教授領導的高性能納米電子器件研究小組近日成功研發了局部背栅碳納米管場效應晶體管。這種晶體管採用碳納米管作為載流子傳輸溝道。這種用于晶體管的碳納米管是採用化學汽相澱積的方法結合觸媒材料定嚮原位生長而成的。它具有小呎吋，大電流密度，小電阻，大載流子遷移率，熱導性好等特點。不同于其它碳納米管場效應晶體管的全局柵，該晶體管採用光刻SOI芯片形成的局部柵。該結構結合了局部柵和原位生長兩種技術，解決了納米管場效應晶體管應用的關鍵技術問題，使得納米管場效應晶體管應用于納米電子集成電路成為可能。並且，其工藝過程與傳統的CMOS工藝有很好的兼容性。該項目由香港創新科技署資助。我們竭誠歡迎各廠商垂詢合作。 Technology: Combining local gates using SOI silicon film and catalyst oriented grown carbon nanotubes (CNT) with CVD technique, a local gate carbon nanotube field effect transistor (CNFET) was implemented. The threshold voltage Vth is 0.3V. The Subshreshold Slope is as small as 165 mV/dec. The ratio of Ion/Ioff is up to 105 (for Tox = 90nm). Hole mobility μp is ~ 2800 cm2/V•s. Individual device operation, batch fabrication, and better compatibility to the CMOS process were realized. Advantages: The configuration proposes a feasible approach to integrate the CNTs to CMOS circuits. Applications: Nano devices and logic integrated circuits for nanoelectronics.
FOCUS AREA(S): Nanotechnology and Advanced Materials
KEYWORDS: 碳納米管場效應晶體管, Carbon Nanotube Field Effect Transistor
MODE OF COLLABORATION: Technology Licensing, Further R&D Collaboration
STATUS PATENT: NA	PATENT NO: NA
ORGANIZATION: Hong Kong University of Science and Technology R and D Corporation Limited
CONTACT PERSON: Shirley Woo	EMAIL: cawoosw@ust.hk
TEL: (852)-23587918	FAX: (852)-23582751
WEBSITE: http://rdc.ust.hk/	DATE: 03/01/2005