PROGRESS: Completed Project	PROJECT REF: INMT4
PROJECT TITLE: 超薄高介電材料的製備和性能分析 Ultra-Thin High Dielectric Constant Material Deposition and Characterization
PROJECT DESCRIPTION: 香港科技大學電機及電子工程系及納米材料技術研發所陳文新教授和陳正豪教授領導的納米級器件高介電材料研究小組近日在納米高介電材料的製備和性能研究方面取得突破性進展。高介電材料對於90納米以下級器件的開發和生産起著舉足輕重的作用，而且此材料的製備和具體的物理及材料性能的研究更是決定其是否能夠應用于生産的重要環節。該研究小組經過近一年的研究﹐成功實現了通過單原子層澱積及磁導濺射的方法來製備1到5個納米厚度的高介電材料。而且，通過一系列實驗驗證，通過此方法製備的高介電材料厚度均勻，表面平整，而且實現了極低的洩漏電流和很高的擊穿電壓。擁有這些優質的材料及電學性能，該組研製的高介電材料非常適合應用于納米晶體管、納米非易失性存儲器等納米級器件當中，並實現大規模生産。目前，該組研究人員正致力於該種材料性能及製備的進一步研究和開發中，以期早日達到商用標準。該項目由香港創新科技署資助。我們竭誠歡迎各廠商垂詢合作。 Technology: High quality ultra-thin high dielectric constant material with a few atomic layers (or a few nanometers thick) is extremely important for the scaling of the lateral dimension of transistors to below 90nm. A good deposition method as well as detail material characterization on the physical properties and reliability are very important. In this work, we have deposited Hafnium Oxide (HfO2) with a uniform thickness ranging from 1nm to 5nm by using Atomic Layer Deposition (ALD) as well as Magneto Sputtering Method. The results shows that the HfO2 has a lower leakage and higher breakdown voltage compared with the most commonly used silicon dioxide with the same equivalent thickness. Advantages: High dielectric constant, low leakage current and able to withstand higher voltage before breakdown Applications: Nano-transistor formation, Non-volatile memory cell etc.
FOCUS AREA(S): Nanotechnology and Advanced Materials
KEYWORDS: 超薄高介電材料, Ultra-Thin High Dielectric Constant Material
MODE OF COLLABORATION: Technology Licensing, Further R&D Collaboration
STATUS PATENT: NA	PATENT NO: NA
ORGANIZATION: Hong Kong University of Science and Technology R and D Corporation Limited
CONTACT PERSON: Shirley Woo	EMAIL: cawoosw@ust.hk
TEL: (852)-23587918	FAX: (852)-23582751
WEBSITE: http://rdc.ust.hk/	DATE: 03/01/2005