PROGRESS: Completed Project	PROJECT REF: PA118
PROJECT TITLE: Novel Polysilicon Material and Semiconductor Devices Formed Therefrom
PROJECT DESCRIPTION: The present invention relates to a novel polysilicon material, novel polysilicon based electronic devices, and the fabrication methods therefore. In particular, the invention relates to a novel metal induced lateral crystallization polysilicon (MILC poly-Si) fabrication technique that may be employed in a wide range of semiconductor devices. After MILC, re-crystallization is performed at high temperature in an inert ambient. Significant improvement in material quality results from the thermal treatment. High temperature re-crystallized MILC poly-Si can be applied to (i) devices for sensors, and (ii) TFTs for flat panel displays (FPDs) and 3-dimensional integrated circuits. Potential Applications: - Most poly-Si-based sensors - Transmissive flat panel displays (FPDs) on quartz - Other high-temperature compatible transparent substrate - Non-transmissive displays on poly-Si - Other high-temperature compatible opaque substrate - Integrated sensors and display systems on poly-Si substrates - Examples: resistor, piezo-resistor, thermistor, pressure sensor, temperature sensor, photodetector, infrared sensor, transistor, … etc. Advantages over Present Technologies: 1. Realization of integrated sensor and non-transmissive display systems on inexpensive bulk poly-Si or other high-temperature compatible substrates using the significantly improved material and device quality of re-crystallized MILC poly-Si. 2. Low-cost batch process 3. Better quality poly-Si thin films can be obtained 4. Limits processing temperature 5. No special requirement on the surface planarity of the underlying oxide 6. Sensors with higher sensitivity, lower temperature instability 7. TFTs with improved electrical properties
FOCUS AREA(S): Integrated Circuit Design, Display Technologies
KEYWORDS: sensor, panel display, transparent substrate, high-temperature, resistor, thermistor, photodetector,
MODE OF COLLABORATION: Technology Licensing, Further R&D Collaboration
STATUS PATENT: Patent_Pending	PATENT NO: NA
ORGANIZATION: Hong Kong University of Science and Technology R and D Corporation Limited
CONTACT PERSON: Shirley Woo	EMAIL: cawoosw@ust.hk
TEL: (852)-23587918	FAX: (852)-23582751
WEBSITE: http://rdc.ust.hk/	DATE: 03/01/2005