PROGRESS: Completed Project	PROJECT REF: PA057
PROJECT TITLE: Polysilicon Devices and a Method for Fabrication Thereof
PROJECT DESCRIPTION: Thin film transistors (TFTs) fabricated on polycrystalline silicon (polysilicon) have gained much attention in flat panel displays such as active matrix liquid crystal displays (LCDs) and in static random access memory (SRAM) units. In comparison with thick film devices TFT devices made with a thin film have the advantages of lower grain boundary trap density, higher mobility, and higher on-state current. It is desirable to make the thin film transistor as thin as possible in order to provide a high supply current in the on-state. The invention relates to novel designs of semiconductor devices and to a method for their fabrication. A novel thin film transistor device, comprising source and drain regions formed of doped polysilicon and interconnected by a polysilicon channel region are invented. Such a transistor having advantages of both conventional thin and thick film devices including high drive current and low leakage current in the off state. The fabrication method for this transistor may also be adapted to manufacture other novel semiconductor devices including semiconductor capacitance devices, EEPROM devices, and conductivity modulated TFTs. Potential Applications: - Display technology - SRAM memory applications - Semiconductor devices including semiconductor capacitance devices, EEPROM devices, and conductivity modulated TFTs Advantages over Present Technologies: 1. Low leakage current and high on-state current 2. No impact ionization and high trapped charge density problem 3. Electric field at the channel or drain junction are reduced 4. The grain boundary trapped charges are reduced 5. Higher mobility
FOCUS AREA(S): Integrated Circuit Design, Display Technologies
KEYWORDS: polysilicon device, fabrication, SRAM memory application, semiconductor device, capacitance device,
MODE OF COLLABORATION: Technology Licensing, Further R&D Collaboration
STATUS PATENT: Granted	PATENT NO: US5982004
ORGANIZATION: Hong Kong University of Science and Technology R and D Corporation Limited
CONTACT PERSON: Shirley Woo	EMAIL: cawoosw@ust.hk
TEL: (852)-23587918	FAX: (852)-23582751
WEBSITE: http://rdc.ust.hk/	DATE: 29/12/2004